BFG505,215 datasheet

Маркировка

BFG505,215
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BFG505,215 Collector- Emitter Voltage Vceo Max: 15 V Configuration: Dual Continuous Collector Current: 18 mA Current - Collector (ic) (max): 18mA Dc Collector/base Gain Hfe Min: 60 Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V Dc Current Gain Hfe Max: 60 @ 5mA @ 6V Emitter- Base Voltage Vebo: 2.5 V Frequency - Transition: 9GHz Gain: - ID_COMPONENTS: 1949036 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 9000 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz Package / Case: SOT-143, SOT-143B, TO-253AA Power - Max: 150mW Power Dissipation: 150 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 15V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 15 V Emitter- Base Voltage VEBO: 2.5 V DC Collector/Base Gain hfe Min: 60 DC Current Gain hFE Max: 60 Gain Bandwidth Product fT: 9000 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: BFG505 T/R Other Names: 934018760215, BFG505 T/R
Количество страниц

13 шт.
Формат

PDF
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146,62 KB